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t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 1 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? military radar ? civilian radar ? professional and military radio communications ? test instrumentation ? wideband or narrowband amplifiers ? jammers ordering information part eccn description t1g4012036 - fl 3a001.b.3.a packaged part flange d t1g4012036 - fs - evb1 e ar99 3.1 - 3.5 ghz evaluation board functional block diagram p in configuration pin no. label 1 v d / rf out 2 v g / rf in flange source general description the triquint t1g4012036 - fl is a 120 w peak (24 w avg.) (p 3db ) discrete gan on sic hemt which operates from dc to 3.5 ghz. the device is cons tructed with triquints proven tqgan25hv process, which features advanced field plate techniques to optimize power a nd efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line - ups and lower thermal management costs. lead - free and rohs compliant evaluation b oards are available upon request . product features ? frequency: dc to 3.5 ghz ? output power (p 3db ): 120 w peak (24 watts avg.) at 3. 3 ghz ? linear gain: >1 5 db at 3. 3 ghz ? operating voltage: 36 v ? low thermal resistance package
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 2 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com rf characterization C load pull performance at 3.5 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 36 v, i dq = 360 ma symbol parameter min typical max units g lin linear gain 1 8 . 7 db p 3db output power at 3 db gain compression 136.0 w de 3db drain efficiency at 3 db gain compression 6 2.7 % pae 3db power - added efficiency at 3 db gain compression 6 1.0 % g 3db gain at 3 db compression 1 5. 7 db notes: 1. v ds = 36 v, i dq = 360 ma; pulse: 100s, 20% absolute maximum ratings parameter value breakdown voltage ( b v dg ) 145 v gate voltage range (v g ) - 7 to 0 v drain current (i d ) 1 2 a gate current (i g ) - 28.8 to 33.6 ma power dissipation (p d ) 1 17 w rf input power, cw, t = 25c (p in ) 44.5 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 320 c storage temperature - 40 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 36 v (typ.) drain quiescent current (i dq ) 360 ma (typ.) peak drain current ( i d ) 6 a (typ.) gate voltage (v g ) - 2 . 9 v (typ.) channel temperature (t ch ) 2 25 c (max .) power dissipation, cw (p d ) 86 w (max) power dissipation, pulse (p d ) 1 44 w (max) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. rf characterization C load pull performance at 3.1 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 36 v, i dq = 360 ma symbol parameter min typical max units g lin linear gain 1 8 . 4 db p 3db output power at 3 db gain compression 1 3 0.0 w de 3db drain efficiency at 3 db gain compression 64.6 % pae 3db power - added efficiency at 3 db gain compression 62.7 % g 3db gain at 3 db compression 15.4 db notes: 1. v ds = 36 v, i dq = 360 ma; pulse: 100s, 20%
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 3 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com rf characterization C narrow band performance at 3.50 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 36 v, i dq = 360 m a symbol parameter typical vswr impedance mismatch ruggedness 10:1 notes: 1. v ds = 36 v, i dq = 360 ma, cw at p 3 db rf characterization C performance at 3.3 ghz (1, 2) test conditions unless otherwise noted: t a = 25 c, v d = 36 v, i dq = 360 ma symbol parameter min typical max units g lin linear gain 15.0 16.0 db p 3db output power at 3 db gain compression 100.0 120.0 w de 3db drain efficiency at 3 db gain compression 50.0 52.0 % g 3db gain at 3 db compression 12.0 13.0 db notes: 1. p erformance at 3.3 ghz in the 3.1 to 3.5 ghz evaluation board 2. v ds = 36 v, i dq = 360 ma; pulse: 100s, 20%
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 4 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) dc at 85 c case 1.62 oc/w channel temperature ( t ch ) 2 2 5 c notes: thermal resistance measured to bottom of package , cw. median lifetime maximum channel temperature t base = 85 c, p d = 144 w
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 5 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits when placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances presented to the device via an rf circuit or load - pull system. the impedances listed follow an optimized trajectory to maintain high power and high efficiency. notes: 1. test conditions: v ds = 36 v, i dq = 360 ma 2. test signal: pulse width = 100 sec, duty cycle = 20%
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 6 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical performance performance is based on compromised impedance point and measured at dut reference plane. 36 38 40 42 44 46 48 50 52 14 15 16 17 18 19 20 21 22 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4012036-fs gain dreff. and pae vs. pout 1100 mhz, 100us 20%, vds = 36v, idq = 360 ma gain dreff. pae z s = 2.32 - j0.10 ? z l = 2.66 + j1.77 ? 36 38 40 42 44 46 48 50 52 12 13 14 15 16 17 18 19 20 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4012036-fs gain dreff. and pae vs. pout 2000 mhz, 100us 20%, vds = 36v, idq = 360 ma gain dreff. pae z s = 1.64 - j2.89 ? z l = 2.80 - j0.19 ? 36 38 40 42 44 46 48 50 52 12 13 14 15 16 17 18 19 20 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4012036-fs gain dreff. and pae vs. pout 3100 mhz, 100us 20%, vds = 36v, idq = 360 ma gain dreff. pae z s = 5.78 - j8.85 ? z l = 2.10 - j1.85 ? 36 38 40 42 44 46 48 50 52 12 13 14 15 16 17 18 19 20 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 36 38 40 42 44 46 48 50 52 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t1g4012036-fs gain dreff. and pae vs. pout 3500 mhz, 100us 20%, vds = 36v, idq = 360 ma gain dreff. pae z s = 10.34 + j2.27 ? z l = 1.71 - j2.40 ?
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 7 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com performance over temperature (1, 2) perfo rmance measured in triquints 3.1 ghz to 3.5 ghz evaluation board at 3 db compression. notes: 1. test conditions: v ds = 36 v, i dq = 360 ma 2. test signal: pulse width = 100 s, duty cycle = 20%
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 8 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com evaluation board performance (1, 2) performance at 3 db compression notes: 1. test conditions: v ds = 36 v, i dq = 360 ma 2. test signal: pulse width = 100 s, duty cycle = 20 % application circuit bias - up procedure set gate voltage (v g ) to - 5.0v set drain voltage (v d ) to 36 v slowly increase v g until quiescent i d is 360 ma. apply rf signal bias - down procedure turn off rf signal turn off v d and wait 1 second to allow drain capacitor dissipation turn off v g
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 9 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com evaluation board layout top rf layer is 0.020 thick rogers ro4350b, ? r = 3.48. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. bill of materials reference des ign value qty manufacturer part number l1 12.55 nh 1 coilcraft 1606 - 10_l l2 12.5 nh 1 coilcraft a04t_l l3 1.6 nh 1 coilcraft 0603hc - 1n6x_l r1 51 ohms 1 vishay/dale crcw120651r0fkea r2 1000 ohms 1 vishay/dale crcw12061k00fkta c1 1.8 pf 1 atc 600s1r8bt c2, c3 15 pf 2 atc 600s150jt250xt c4, c9 1000 pf 2 atc 800b102jt50xt c5 0.01 uf 1 kemet c1206c103krac7800 c6 1 uf 1 allied 18121c105kat2a c7 22 uf 1 sprague t4910d c8 2400 pf 1 murata c08bl242x - 5un - x0t c10 220 uf 1 united chemi - con emvy500ada221mja0g
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 10 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com pin layout note: the t1g4012036 - fl will be marked with the 12036 designator and a lot code marked below the part designator. the yy represents the last two digits of the calendar year the part was manufactured, the ww is the work week of the assembly lot start, the mxxx is the production lot number, and the zzz is an auto - generated serial number. pin description pin symbol description 1 v d / rf out drain voltage / rf output matched to 50 ohms; see evb layout on page 9 as an example. 2 v g / rf in gate voltage / rf input matched to 50 ohms; see evb layout on page 9 as an example. 3 flange source connected to ground; see evb layout on page 9 as an example. notes: thermal resistance measured to bottom of package
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 11 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com mechanical information all dimensions are in millimeters. note: this package is lead - free/rohs - compliant. the plating material on the leads is niau. it is compatible with both lead - free (maximum 260 c reflow temperature) and tin - lead (maximum 245c reflow temperature) soldering processes.
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 12 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with the latest version of j - std - 020, lead free solder, 260 c rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 3 at +260 c convection reflow the part is rated moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j - std - 020. eccn us department of commerce 3a001.b.3.a recommended soldering temperature profile
t1g4012036 - fl 120w peak power, 24w average power, 36v dc C 3.5 ghz, gan rf power transistor datasheet: rev b 02 - 24 - 15 - 13 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info - sales@triquint.com fax: +1.972.994.8504 for technical questions and application information: email: info - products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death.

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